1 3 2 10.2 0.2 |? 3 . 8 0 . 1 5 2.8 0.1 19.0 0.5 pin 3.5 0.3 0.9 0.1 2.5 0.1 13.8 0.5 2.6 0.2 0.5 0.1 8.9 0.2 1.4 0.2 4.5 0.2 pin 1 pin 3 case pin 2 positive ct negative ct suffix "a" case pin 2 pin 3 pin 1 pin 1 pin 3 case pin 2 doubler suffix "d" di m en s i o ns i n m i lli m ete r s features mechanical data p o s i t i on: a ny maximum ratings and electrical characteristics ratings at 25 a m b i ent t e m pe r a t u r e un l e s s o t h e r w i s e s pe c i f i ed. units maximum recurrent peak reverse voltage v rrm v max imum rms v oltage v r m s v m a x i m um d c b l o c k i ng v o l t a g e v dc v m a x i m um a v e r a g e f o r w a r d t o t a l de v i c e m rectif ied current @t c = 1 20 c i f (a v ) a peak forw ard surge current 8.3ms single half b s i ne - w a v e s u pe r i m p o s e d on r ated l o a d i f s m a m a x i m u m f o r w a r d ( i f = 10 a , t c = 2 5 ) v o l ta g e (i f = 10 a,t c =125 ) ( n ote 1 ) ( i f =20a,t c =25 ) m a x i m u m r e v e r s e c u r r ent @ t c = 2 5 at rated dc blocking voltage @t c = 1 00 m a x i m u m t h e r m a l r e s i s t a n c e (note2) r j c /w operating junction temperature range t j storage temperature range t stg 2. thermal resistance from junction to case. m a 30 35 40 45 50 60 20 2 50 21 25 28 32 35 42 30 35 4 0 45 50 60 v o l t a g e r a n g e: 3 0 - 6 0 v curr e n t : 20 a metal silicon junction, majority carrier conduction. ca s e : j e d e c to-220ab , m o l ded p l a s t i c body schottky barrier rectifier s h i gh c u r r ent c apa c i t y , l o w f o r w a r d v o l t age d r op. n o t e : 1 . p u l s e t e s t: 3 0 0 s pu l s e w i d t h , 1% d u t y c y c l e. - 5 5 - --- + 1 50 - 5 5 - --- + 15 0 t e r m i na l s : s o l de r a b l e per m i l - s t d - 750, 1 1 m e t hod 2026 i r v f 0 . 1 0.1 2.0 t o- 2 20ab mbr 2030 c t - - - mbr 206 0c t mbr mbr mbr mbr mbr mbr 20 3 0ct 2035ct 2040ct 2045ct 2050ct 2060ct g ua r d r i ng f or o v er v o l t age p r o t e c t i on. high surge capacity. for use in low voltage, high frequency inverters, free 111 wheeling, and polarity protection applications. p o l a r i t y : a s m a r k e d w e i gh t : 0.0 71 ounce, 2. 006 grams 15 50 v - 0.57 0.75 0.70 single phase,half wave,60hz,resistive or inductive load.for capactive load,derate current by 20%. (i f = 20 a,t c =125 ) 0.84 0.95 0. 7 2 0.85 diode semiconductor korea www.diode.kr
t j =25 pulse width=300 s 1% duty cycle . 2 . 4 . 6 . 8 1.0 1 . 2 1 . 4 1 . 6 1 . 8 2.0 2.2 1 1 0 1 0 0 2 0 0 MBR2030CT-mbr2045ct mbr2050ct-mbr2060ct 04 06 0 20 100 120 140 80 t c =25 ?? 0.1 1 . 0 .01 tc=100 ?? 0 4 8 0 30 60 90 120 150 12 16 20 0 30 1 100 150 60 90 120 10 8 . 3 m s s i ng l e h a l f s i n e w a v e t j = 125 average forward output current, amperes fi g. 3 -- typical forward characteri sti c fi g. 4 -- typi cal reverse characteristi c instantaneous forward voltage, volts nu m be r o f c y c l e s a t 6 0 h z case t e m pe r a t ur e , instantaneous forward current, peak forward surge current, f i g . 2 - - f o r w ard d e ra t i n g cur v e amperes amperes milli amperes pe r c e n t o f r a t e d p e ak r eve r se v o l t a g e ,% fi g. 1 -- peak forward surge current instantaneous reverse current, MBR2030CT - - - mbr2060ct 10 MBR2030CT -mbr2045ct mbr2050ct-mbr2060ct MBR2030CT- mbr2045ct mbr2050ct-mbr2060ct www.diode.kr diode semiconductor korea
|
